主要研究领域包括新型半导体材料与器件、柔性电子、新型薄膜晶体管、纳米工艺加工技术研究等。先后主持了国家自然基金项目、国家973项目、科技部重点研发计划、华为技术有限公司合作项目、京东方科技集团股份有限公司合作项目等十余项。获得深圳市技术发明奖一等奖、广东省科学技术奖二等奖和中国电子学会科技进步奖一等奖。已发表科技论文一百余篇，申请发明专利五十余项。
1. Han, DD;Zhang, Y;Cong, YY;Yu, W;Zhang, X;Wang, Y;//Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate//SCIENTIFIC REPORTS Year:2016 Volume:6 Page: srep38984
2. Zhou, Xiaobin; Han, Dedong*; Dong, Junchen; Li, Huijin; Yi, Zhuang; Zhang, Xing; Wang, Yi //The Effects of Post Annealing Process on the Electrical Performance and Stability of Al-Zn-O Thin-Film Transistors//: IEEE Electron Device Letters, v 41, n 4, p 569-572, April 2020
3. Li, Huijin; Han, Dedong*; Dong, Junchen; Yi, Zhuang; Zhou, Xiaobin; Zhang, Shengdong; Zhang, Xing; Wang, Yi //Enhanced Performance of Atomic Layer Deposited Thin-Film Transistors with High-Quality ZnO/Al2O3 Interface//: IEEE Transactions on Electron Devices, v 67, n 2, p 518-523, February 2020
4. Zhou, Xiaobin; Han, Dedong*; Dong, Junchen; Li, Huijin; Yu, Wen; Yi, Zhuang; Zhang, Shengdong; Zhang, Xing; Wang, Yi //High-performance Al-Zn-O Thin-Film Transistors Sputtering at Different Power//: IEEE Transactions on Electron Devices, v 66, n 11, p 4774-4777, November 2019
5. Yu, Wen; Wei, Tiantian; Wang, Yi; Han, Dedong*; Zhao, Dongyan; Cai, Jian; Wang, Yubo; Zhang, Haifeng; Chen, Yanning; Yuan, Yidong; Fu, Zhen; Wang, Shuaipeng //Performance Enhancement of TiZO Thin Film Transistors by Introducing a Thin ITO Interlayer//: IEEE Journal of the Electron Devices Society, v 7, p 1302-1305, 2019
6. Li, Huijin; Han, Dedong*; Yi, Zhuang; Dong, Junchen; Zhang, Shengdong; Zhang, Xing; Wang, Yi //High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition//: IEEE Transactions on Electron Devices, v 66, n 7, p 2965-2970, July 2019
7. Dong, Junchen; Li, Huijin; Han, Dedong*; Yu, Wen; Luo, Zhen; Liang, Yi; Zhang, Shengdong; Zhang, Xing; Wang, Yi //Investigation of c-axis-aligned crystalline gadolinium doped aluminum-zinc-oxide films sputtered at room-temperature//: Applied Physics Letters, v 112, n 1, January 1, 2018
8. Yu, Wen; Han, Dedong*; Li, Huijin; Dong, Junchen; Zhou, Xiaobin; Yi, Zhuang; Luo, Zhen; Zhang, Shengdong; Zhang, Xing; Wang, Yi //Titanium doped zinc oxide thin film transistors fabricated by cosputtering technique//: Applied Surface Science, v 459, p 345-348, 30 November 2018
9. Han, DD;Huang, LL;Yu, W;Cong, YY;Dong, JC;Zhang, X;Wang, Y;//Effects of Channel Layer Thickness on Characteristics of Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors//IEEE TRANSACTIONS ON ELECTRON DEVICES Year:2017 Volume:64 Issue:5 Page:1997-2000
10. Cong, YY;Han, DD*;Dong, JC;Zhang, SD;Zhang, X;Wang, Y;//Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate//SCIENTIFIC REPORTS Year:2017 Volume:7 Page: 41598
11. Dong, Junchen; Han, Dedong*; Li, Huijin; Yu, Wen; Zhang, Shendong; Zhang, Xing; Wang, Yi //Effect of Al doping on performance of ZnO thin film transistors//: Applied Surface Science, v 433, p 836-839, March 1, 2018
12. Zhao, Kai; Xie, Jingye; Zhao, Yudi; Han, Dedong*; Wang, Yi; Liu, Bin;Dong, Junchen; //Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process//NANOMATERIALS: 12(1)JAN 2022
13. Chen, Zhuofa; Han, Dedong*; Zhang, Xing; Wang, Yi;//Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure//SCIENTIFIC REPORTS, 9, NOV 20 2019
14. Han, DD;Chen, ZF;Cong, YY;Yu, W;Zhang, X;Wang, Y;//High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates//IEEE TRANSACTIONS ON ELECTRON DEVICES Year:2016 Volume:63 Issue:8 Page:3360-3363
15. Yu, W;Han, DD*;Dong, JC;Cong, YY;Cui, GD;Wang, Y;Zhang, SD;//AZO Thin Film Transistor Performance Enhancement by Capping an Aluminum Layer//IEEE TRANSACTIONS ON ELECTRON DEVICES Year:2017 Volume:64 Issue:5 Page:2228-2232
16. Cui, GD;Han, DD*;Cong, YY;Dong, JC;Yu, W;Zhang, SD;Zhang, X;Wang, Y;//High-Performance Ti-Doped Zinc Oxide TFTs With Double-Layer Gate Dielectric Fabricated at Low Temperature//IEEE ELECTRON DEVICE LETTERS Year:2017 Volume:38 Issue:2 Page:207-209
17. Cai, J;Han, DD*;Geng, YF;Wang, W;Wang, LL;Zhang, SD;Wang, Y; //High-Performance Transparent AZO TFTs Fabricated on Glass Substrate //IEEE TRANSACTIONS ON ELECTRON DEVICES Year:2013 Volume:60 Issue:7 Page:2432-2435
18. Li, HJ;Han, DD*;Liu, LQ;Dong, JC;Cui, GD;Zhang, SD;Zhang, X;Wang, Y;//Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique//NANOSCALE RESEARCH LETTERS Year:2017 Volume:12 Page:11671
19. Li, Huijin; Han, Dedong*; Dong, Junchen; Yu, Wen; Liang, Yi; Luo, Zhen; Zhang, Shengdong; Zhang, Xing; Wang, Yi//Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition//: Applied Surface Science, v 439, p 632-637, May 1, 2018
20. Li, Qi; Dong, Junchen; Han, Dedong*; Wang, Yi;// Effects of channel thickness on electrical performance and stability of high-performance insno thin-film transistors//Membranes, v 11, n 12, December 2021
21. Cong, YY;Han, DD*;Zhou, XL;Huang, LL;Shi, P;Yu, W;Zhang, Y;Zhang, SD;Zhang, X;Wang, Y; //High-Performance Al-Sn-Zn-O Thin-Film Transistor With a Quasi-Double-Channel Structure //IEEE ELECTRON DEVICE LETTERS Year:2016 Volume:37 Issue:1 Page:53-56
22. Han, DD;Wang, W;Cai, J;Wang, LL;Ren, YC;Wang, Y;Zhang, SD; //Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature //JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Year:2013 Volume:13 Issue:7 Page:5154-5157
23. Han, DD;Zhang, SM;Zhao, FL;Dong, JC;Cong, YY;Zhang, SD;Zhang, X;Wang, Y; //Transparent gallium doped zinc oxide thin-film transistors fabricated on glass substrate //THIN SOLID FILMS Year:2015 Volume:594 Page:266-269
24. Han, DD;Cai, J;Wang, W;Wang, LL;Wang, Y;Liu, LF;Zhang, SD; //High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature //SENSOR LETTERS Year:2013 Volume:11 Issue:8 Page:1509-1512
25. Chen, ZF;Han, DD*;Zhao, NN;Cong, YY;Wu, J;Dong, JC;Zhao, FL;Liu, LF;Zhang, SD;Zhang, X;Wang, Y; //High-performance dual-layer channel ITO/TZO TFTs fabricated on glass substrate // ELECTRONICS LETTERS Year:2014 Volume:50 Issue:8 Page:633-634
26. Chen, ZF;Han, DD*;Zhao, NN;Cong, YY;Wu, J;Huang, LL;Dong, JC;Zhao, FL;Liu, LF;Zhang, SD;Zhang, X;Wang, Y; //High-performance full transparent tin-doped zinc oxide thin-film transistors fabricated on glass at low temperatures // ELECTRONICS LETTERS Year:2014 Volume:50 Issue:20 Page:1463-1464
27. Cong, YY;Han, DD*;Dong, JC;Yu, W;Zhang, XM;Cui, GD;Zhang, X;Zhang, SD;Wang, Y; //High-performance fully transparent Al-Sn-Zn-O thin-film transistors using double-channel structures // ELECTRONICS LETTERS Year:2016 Volume:52 Issue:12 Page:1069-1070
28. Huang, LL;Han, DD*;Zhang, Y;Shi, P;Yu, W;Cui, GD;Cong, YY;Dong, JC;Zhang, SD;Zhang, X;Wang, Y; //High mobility transparent flexible nickel-doped zinc oxide thin-film transistors with small subthreshold swing // ELECTRONICS LETTERS Year:2015 Volume:51 Issue:20 Page:1595-+
29. Yu, W;Han, DD*;Shi, P;Cong, YY;Zhang, Y;Dong, JC;Zhou, XL;Huang, LL;Cui, GD;Zhang, SD;Zhang, X;Wang, Y; //Effects of substrate temperature on performance of calcium-doped zinc oxide TFTs // ELECTRONICS LETTERS Year:2015 Volume:51 Issue:16 Page:1286-1287
30. Zhao, NN;Han, DD*;Chen, ZF;Wu, J;Cong, YY;Dong, JC;Zhao, FL;Zhang, SD;Zhang, X;Wang, Y; //High Performance Ti-Doped ZnO TFTs With AZO/TZO Heterojunction S/D Contacts //JOURNAL OF DISPLAY TECHNOLOGY Year:2015 Volume:11 Issue:5 Page:412-416
31. 发明人: 韩德栋;郁文;王漪;董俊辰;丛瑛瑛;崔国栋;张盛东;刘晓彦;康晋锋;申请号: CN201610176781.9申请日: 2016.03.25发明名称: 一种具有金属覆盖层的薄膜晶体管及其制备方法
32. 发明人: 韩德栋;郁文;王漪;石盼;张翼;黄伶灵;丛瑛瑛;董俊辰;张盛东;刘晓彦;康晋锋;专利号: ZL201510430849.7申请日: 2015.07.21发明名称: 三态金属氧化物半导体薄膜晶体管及其制备方法公开（公告）号: 105070762公开（公告）日: 2019.01.11
33. 发明人: 韩德栋;郁文;王漪;石盼;丛瑛瑛;张翼;董俊辰;周晓梁;黄伶灵;张盛东;刘力锋;刘晓彦;康晋锋;申请号: CN201510158994.4申请日: 2015.04.03发明名称: 一种掺钙氧化锌薄膜晶体管及其制备方法
34. 发明人: 韩德栋;石盼;王漪;丛瑛瑛;董俊辰;周晓梁;郁文;张翼;黄伶灵;刘力锋;张盛东;刘晓彦;康晋锋;申请号: CN201510111273.8申请日: 2015.03.13发明名称: 一种掺钼氧化锌薄膜晶体管及其制备方法
35. 发明人: 韩德栋;陈卓发;赵楠楠;王漪;丛瑛瑛;吴静;赵飞龙;董俊辰;黄伶灵;张翼;张盛东;刘力锋;刘晓彦;康晋锋;申请号: CN201410428650.6申请日: 2014.08.27发明名称: 一种薄膜晶体管及其制备方法
36. 发明人: 韩德栋;黄伶灵;陈卓发;丛瑛瑛;赵楠楠;吴静;赵飞龙;董俊辰;王漪;刘力锋;张盛东;刘晓彦;康晋锋;申请号: CN201410345212.3申请日: 2014.07.18发明名称: 一种氧化锌薄膜晶体管的制备方法
37. 发明人: 韩德栋;丛瑛瑛;黄福青;单东方;张索明;田宇;王漪;张盛东;刘晓彦;康晋锋;申请号: CN201310613115.3申请日: 2013.11.27发明名称: 一种非晶氧化锌基薄膜晶体管及其制备方法
38. 发明人: 韩德栋;张索明;田宇;单东方;黄福青;丛瑛瑛;王漪;张盛东;刘力锋;刘晓彦;康晋锋;申请号: CN201310018388.3申请日: 2013.01.17发明名称: 一种底栅薄膜晶体管及其制备方法
39. 发明人: 韩德栋;蔡剑;王龙彦;刘盖;王亮亮;马建忠;丛瑛瑛;张翼;田宇;张索明;单东方;黄福青;王漪;张盛东;刘晓彦;康晋锋; 专利号：ZL201210425355.6申请日: 2012.10.30发明名称: 一种像素驱动电路及其驱动方法公开（公告）号: CN102915703B公开（公告）日: 2014.12.17
40. 发明人: 韩德栋;王薇;蔡剑;王亮亮;耿友峰;刘力锋;王漪;张盛东;刘晓彦;康晋锋;申请号: CN201210213660.9申请日: 2012.06.25发明名称: 一种在柔性衬底上的薄膜晶体管的制备方法
