Dr. Zirui Wang's research focuses on device physics and reliability in advanced devices. He has extensive experience in both academic research and industrial R&D, with contributions to advanced semiconductor device reliability and cryogenic integrated circuits. Previously, he worked at HiSilicon on advanced logic technologies and 3D IC, contributing to the development of reliability evaluation and modeling frameworks for advanced technologies.
He has published multiple papers as first or co-first author at flagship international conferences, including IEDM and VLSI, and in leading journals such as IEEE TED. His paper presented at IEDM 2024 was nominated for the Best Student Paper Award. He has contributed as a key researcher to several major national research projects. He has also served as a Guest Editor for Micromachines and as a regular reviewer for international journals, including IEEE TED, ACM TODAES and Microelectronics Reliability.
Selected Papers:
[1] Zirui Wang, Haoran Wang, Wen-Feng Li, Yuxiao Wang, Zixuan Sun, Anyi Zhu, Lang Zeng, Yueyang Liu, Runsheng Wang, Ru Huang, “Towards Understanding the Dynamic Variation in FinFET at Cryogenic Temperature: New Observations and Physical Modeling,” IEEE, IEEE International Electron Devices Meeting (IEDM), pp. 34.5.1-34.5.4, 2024. (Best Student Paper Candidate)
[2] Zirui Wang, Haoran Lu, Zixuan Sun, Cong Shen, Baokang Peng, Wen-Feng Li, Yongkang Xue, Da Wang, Zhigang Ji, Lining Zhang, Yueyang Liu, Xiangwei Jiang, Runsheng Wang, Ru Huang, “New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS,” IEEE, IEEE International Electron Devices Meeting (IEDM), pp. 16.2.1-16.2.4, 2023.
[3] Zuoyuan Dong, Zirui Wang, Hongbo Wang, Xiaomei Li, Chen Luo, Jialu Huang, Lan Li, Zepeng Huang, Zixuan Sun, Yue-Yang Liu, Xing Wu, Runsheng Wang, “Towards Understanding Cryogenic Reliability in FinFETs under Hot Carrier Stress: New Findings on Ge Migration, and Impacts of Tail States Evolution,” IEEE, IEEE Symposium on VLSI Technology and Circuits (VLSI), pp. 1-3, 2025. (Co-First Author)
[4] Zirui Wang, Haoran Wang, Wen-Feng Li, Yuxiao Wang, Zixuan Sun, Anyi Zhu, Lang Zeng, Yueyang Liu, Lining Zhang, Runsheng Wang, Ru Huang, “Investigation on the Band Tail States in FinFETs at Cryogenic Temperature,” IEEE, IEEE Transactions on Electron Devices (TED), vol. 72, no. 5, pp. 2670-2676, 2025.
[5] Zirui Wang, Haoran Wang, Yuxiao Wang, Zixuan Sun, Lang Zeng, Runsheng Wang, Ru Huang, “New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic Temperature,” IEEE, IEEE International Reliability Physics Symposium (IRPS), pp. 6A.3-1-6A.3-7, 2024.
